Cite
HARVARD Citation
Toguchi, M. et al. (2019). Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82– ions. Applied physics express. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Toguchi, M. et al. (2019). Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82– ions. Applied physics express. p. . [Online].