Weak localization and microwave-irradiated transport in multilayer epitaxial graphene grown on SiC. (3rd November 2015)

• Record Type: Journal Article
• Authors: Liu, Chieh-I; Wang, Pengjie; Mi, Jian; Lee, Hsin-Yen; Wang, Yi-Ting; Ho, I-Fan; Zhang, Chi; Lin, Xi; Elmquist, Randolph E; Liang, Chi-Te
• Is Part Of: Materials research express. Volume 2:Number 11(2015)
• Publication Date: 2015-11-03
• Subjects: weak localization -- graphene -- microwave; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/2/11/115002
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: We have studied weak localization (WL) and microwave-irradiated transport in multilayer graphene grown on SiC(0001). Different scattering channels are identified by analyzing the WL data. Moreover, we have shown that at a fixed ambient temperature, irradiating graphene with a microwave appears to be equivalent to changing the ambient temperature without microwave. We find that both the zero-field resistance of graphene and the WL correction term can be used as reliable thermometers which agree well with each other.