Modelling charge storage near full well in CCDs. (17th May 2017)

• Record Type: Journal Article
• Authors: Weatherill, D.P.; Plackett, R.; Arndt, K.; Shipsey, I.P.J.
• Is Part Of: Journal of instrumentation. Volume 12:Number 5(2017:May)
• Page Start: C05008
• Page End: C05008
• Publication Date: 2017-05-17
• Subjects: Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) -- Detectors for UV, visible and IR photons; Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/12/05/C05008
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: The shape and size of the stored charge packet within a CCD pixel after exposure has implications for optimal device operation, susceptibility to radiation damage and modelling of dynamic charge collection effects such as the "Brighter-Fatter Effect". Above the full well capacity, phenomena such as bleed trails and surface charge loss occur. In this paper we discuss why accurately reproducing saturation effects in simulations based on electrostatics is difficult, and present an approach to modelling the storage of charge in CCD pixels using commercial semiconductor simulation software. We suggest experimental measurements which can be connected to such modelling. Full well measurements on a thick, high resistivity back illuminated sensor (the e2v CCD261) are presented.