Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements. (1st March 2017)
- Record Type:
- Journal Article
- Title:
- Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements. (1st March 2017)
- Main Title:
- Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements
- Authors:
- Hatakeyama, Tetsuo
Kiuchi, Yuji
Sometani, Mitsuru
Harada, Shinsuke
Okamoto, Dai
Yano, Hiroshi
Yonezawa, Yoshiyuki
Okumura, Hajime - Abstract:
- Abstract: The effects of nitridation on the density of traps at SiO2 /SiC interfaces near the conduction band edge were qualitatively examined using a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance–voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge as a result of nitridation, but the interface traps were not completely eliminated by nitridation.
- Is Part Of:
- Applied physics express. Volume 10:Number 4(2017)
- Journal:
- Applied physics express
- Issue:
- Volume 10:Number 4(2017)
- Issue Display:
- Volume 10, Issue 4 (2017)
- Year:
- 2017
- Volume:
- 10
- Issue:
- 4
- Issue Sort Value:
- 2017-0010-0004-0000
- Page Start:
- Page End:
- Publication Date:
- 2017-03-01
- Subjects:
- Physics -- Periodicals
Technology -- Periodicals
621.05 - Journal URLs:
- http://iopscience.iop.org/1882-0786/ ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.7567/APEX.10.046601 ↗
- Languages:
- English
- ISSNs:
- 1882-0778
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 11076.xml