Cite
HARVARD Citation
Ke, S. et al. (2017). Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer. Journal of physics. p. . [Online].
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Ke, S. et al. (2017). Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer. Journal of physics. p. . [Online].