Balanced carrier injection of quantum dots light-emitting diodes: the case of interface barrier of bilayer ZnO electron transport layer. (1st October 2018)

• Record Type: Journal Article
• Authors: Tu, Yufei; Wang, Shujie; Zhang, Yidong; Chen, Ling; Fang, Yan; Du, Zuliang
• Is Part Of: Nanotechnology. Volume 29:Number 48(2018)
• Publication Date: 2018-10-01
• Subjects: quantum dot light-emitting diodes -- charge balance -- interface barrier -- electron transport layer; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aae0b8
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Unbalanced carrier injection is one of the most important reasons for the efficiency roll-off in quantum dot light-emitting diodes. Reducing the electron injection can effectively balance the carrier transport and improve the optoelectronic performance of the device. In this work, a bilayer ZnO electron transport layer was fabricated by twice spin-coating and annealing methods. More than 60% of electrons are effectively blocked by the ZnO interface barrier compared with the standard device, resulting in increasing the maximum luminance of the device from 25 390 to 48 220 cd m −2 and the current efficiency from 1.5 to 3.2 cd A −1 .