Atom-to-atom interaction of O2 with epi Ge(001)-2 × 1 in elucidating GeOx formation. (10th October 2018)

• Record Type: Journal Article
• Authors: Cheng, Yi-Ting; Wan, Hsien-Wen; Cheng, Chiu-Ping; Kwo, Jueinai; Hong, Minghwei; Pi, Tun-Wen
• Is Part Of: Applied physics express. Volume 11:Number 11(2018)
• Publication Date: 2018-10-10
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.11.115701
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: A microscopic view of O2 adsorption on an epi Ge(001)-2 × 1 surface at room temperature, as studied by synchrotron radiation photoemission, is presented. One of the dissociated O atoms etches off the up-dimer atom to form the GeO species. The other dissociated O atom fills the vacancy and bonds with the underneath Ge atom in the subsurface layer. The down-dimer atom and its backbond with the subsurface atom remain inert to O2 . The present investigation reports the notorious effect of O2 on the Ge surface, which should not be overlooked in Ge metal–oxide–semiconductor (MOS) device development.