Hot-carrier generation in a solar cell containing InAs/GaAs quantum-dot superlattices as a light absorber. (24th July 2018)

• Record Type: Journal Article
• Authors: Watanabe, Daiki; Iwata, Naoto; Asahi, Shigeo; Harada, Yukihiro; Kita, Takashi
• Is Part Of: Applied physics express. Volume 11:Number 8(2018)
• Publication Date: 2018-07-24
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.11.082303
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We demonstrated hot-carrier (HC) effects in a solar cell containing InAs/GaAs quantum-dot superlattices (QDSLs) functioning as a light absorber at low temperature. The band edge of the GaAs can energetically select HCs created in the QDSL. The short-circuit current density increases almost linearly with the incident photon density under below-bandgap excitation, suggesting that nonlinear processes such as saturable absorption are negligible. The short-circuit current and the open-circuit voltage of the QDSL solar cell show step-wise changes as a function of the excitation density because of state filling.