Cite
HARVARD Citation
Zhang, Z. et al. (2018). Ab initio study of impact of nitridation at amorphous-SiNx/GaN interface. Applied physics express. p. . [Online].
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Zhang, Z. et al. (2018). Ab initio study of impact of nitridation at amorphous-SiNx/GaN interface. Applied physics express. p. . [Online].