Wafer-scale synthesis of a uniform film of few-layer MoS2 on GaN for 2D heterojunction ultraviolet photodetector. (8th August 2018)

• Record Type: Journal Article
• Authors: Goel, Neeraj; Kumar, Rahul; Roul, Basanta; Kumar, Mahesh; Krupanidhi, S B
• Is Part Of: Journal of physics. Volume 51:Number 37(2018)
• Publication Date: 2018-08-08
• Subjects: MoS2 -- 2D materials -- GaN -- heterojunctions -- photodetector; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aad4e8
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Layered transition metal dichalcogenide materials grown over a conventional 3D semiconductor substrate have ignited a spark of interest in the electronics industry. The integration of these 2D layered materials extensively addresses the formidable challenges faced by a new generation of opto-electronic and photovoltaic devices. Herein, we have demonstrated a 2D/3D heterojunction type photodetector by depositing MoS2 on a GaN substrate with a mass-scalable sputtering method. Spectroscopic and microscopic characterizations expose the signature of the highly crystalline, homogeneous and controlled growth of a deposited few-layer MoS2 film. The greater light absorption of few-layer MoS2 results in the high performance of the MoS2 /GaN photodetector. Our device shows high external spectral responsivity (~10 3 A W −1 ) and detectivity (~10 11 Jones) with a very fast response time (~5 ms). Our obtained results are significantly better than previous MoS2 - and GaN-based photodetectors. This work unveils a new perspective in MoS2 /GaN heterojunctions for high-performance optoelectronic applications.