Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET. (17th August 2017)

• Record Type: Journal Article
• Authors: Uddin, Wasi; Georgiev, Yordan M; Maity, Sarmistha; Das, Samaresh
• Is Part Of: Journal of physics. Volume 50:Number 36(2017)
• Publication Date: 2017-08-17
• Subjects: junction less transistor -- 1D transport -- single electron tunneling -- Coulomb blocked -- dopant–dopant interaction; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aa7eb9
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We report 1D electron transport of silicon junctionless tri-gate n -type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunneling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant–dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.