Evaluation of atomic hydrogen effect using polycrystalline Ge thin-film transistors. (31st May 2019)

• Record Type: Journal Article
• Authors: Heya, Akira; Hirano, Shota; Matsuo, Naoto
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 6(2019)
• Publication Date: 2019-05-31
• Subjects: atomic hydrogen -- polycrystalline germanium -- thin-film transistor -- soft X-ray irradiation -- evaluation environment -- defect; Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab21ad
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The influence of atomic hydrogen was investigated using a polycrystalline germanium (poly-Ge) thin-film transistor. High-density-atomic hydrogens were generated by catalytic reaction on a heated W mesh. The defect density in the poly-Ge film and at the poly-Ge/SiO2 interface can be reduced by three orders of magnitude with the passivation ratio of 2.3 × 10 −5 . From the dependence of treatment time and air exposure time for long time, the defects in poly-Ge films were preferentially terminated in comparison with that at the poly-Ge/SiO2 interface.