Green laser diodes with constant temperature growth of InGaN/GaN multiple quantum well active region. (31st May 2019)

• Record Type: Journal Article
• Authors: Tian, Aiqin; Liu, Jianping; Zhou, Renlin; Zhang, Liqun; Huang, Siyi; Zhou, Wei; Ikeda, Masao; Zhang, Shuming; Li, Deyao; Jiang, Lingrong; Lin, Hao; Yang, Hui
• Is Part Of: Applied physics express. Volume 12:Number 6(2019)
• Publication Date: 2019-05-31
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab21b6
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Increasing trench defect density in green InGaN/GaN multiple quantum wells (MQWs) has been reported to be one cause for "green gap" and creates a challenge in fabricating high-performance green laser diodes (LDs). In this article, we report methods to suppress the density of trench defects. Suppressed defect density in InGaN/GaN MQWs results in greatly improved optical quality, as indicated by increasing photoluminescence (PL) intensity and nonradiative recombination lifetime, and decreasing PL full-width-half-maximums (FWHMs), which can be as narrow as 113 meV. This enabled constant temperature growth of the InGaN/GaN MQW active region of the green LD structure and greatly improved slope efficiency.