Cite
HARVARD Citation
Tian, P. et al. (2017). Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD. Journal of physics. p. . [Online].
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Tian, P. et al. (2017). Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD. Journal of physics. p. . [Online].