Electrically tunable optical properties of few-layer black arsenic phosphorus. (28th September 2018)

• Record Type: Journal Article
• Authors: Yu, Li; Zhu, Zhen; Gao, Anyuan; Wang, Junzhuan; Miao, Feng; Shi, Yi; Wang, Xiaomu
• Is Part Of: Nanotechnology. Volume 29:Number 48(2018)
• Publication Date: 2018-09-28
• Subjects: two-dimensional materials -- mid-IR modulation -- black arsenic phosphorus; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aae05f
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Black arsenic phosphorus (b-AsP) is a promising two-dimensional material for various optoelectronic applications, bridging the wavelength gap between two-dimensional molybdenum disulfide and graphene. In particular, it has intriguing potential in photodetectors and great advantages in the mid-infrared field. However, its optoelectronic modulation has yet to be elucidated, which requires a fundamental understanding of its field-effect optical modulation. Here, we report the measurements of the lower-energy infrared anisotropic optical response of thin b-AsP under different electrical gating. We reveal that in addition to band edge absorption, amplitude modulation of sub-band absorption up to ten percent is also obtained in reflection extinction. These in-gap absorptions are attributed to spin–orbital coupling and free carrier absorption. Our results suggest the important potential for use of b-AsP in mid-infrared optoelectronic modulator applications.