Cite
HARVARD Citation
Li, Z. et al. (2017). High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111). Applied physics express. p. . [Online].
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Li, Z. et al. (2017). High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111). Applied physics express. p. . [Online].