Improvement of vertical organic field-effect transistors by surface modification of metallic source electrodes. (13th October 2017)

• Record Type: Journal Article
• Authors: Chang, Jui-Fen; Lai, Yi-Chien; Yang, Rui-Hao; Yang, Yaw-Wen; Wang, Chia-Hsin
• Is Part Of: Applied physics express. Volume 10:Number 11(2017)
• Publication Date: 2017-10-13
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.111601
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: A proper design of the injection barrier between a source electrode and an active layer is essential to achieve high-performance vertical organic field-effect transistors (VOFETs). Here, we show that a modification of metallic source electrodes with thiol-based self-assembled monolayers (SAMs) is effective in controlling the electrode work function and injection barrier into the active layer, leading to a significantly reduced off-current and undegraded on-current in an optimized VOFET. For the studied C60 VOFETs with Ag electrodes, the on/off ratio improves from <10 to 10 3 –10 4 when the injection barrier is varied from 0.02 to 0.33 eV by SAM modification.