AlGaInP/Ge double-junction solar cell with Sb incorporation directly used for lattice-matched five-junction solar cell application. (24th January 2017)

• Record Type: Journal Article
• Authors: Zhang, Yang; Wang, Qing; Zhang, Xiaobin; Chen, Bingzhen; Wu, Bo; Ma, Difei; Zhang, Lu; Wang, Zhiyong
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 2(2017)
• Publication Date: 2017-01-24
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.025501
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: AlGaInP is a prospectively valuable material for high-efficiency lattice-matched tandem AlGaInP/AlGaInAs/GaAs/GaInNAs/Ge (2.05/1.7/1.4/1.0/0.7 eV) five-junction solar cells. We examine the optical properties of AlGaInP materials with trimethylantimony (TMSb) incorporated at various flow speeds. Then, we apply Al0.1 GaInP with TMSb incorporated at 15.6 µmol/min, whose band gap is 2.04 eV, to the fabrication of an AlGaInP/Ge double-junction (DJ) solar cell. Moreover, we analyze the photovoltaic current density–voltage ( J – V ) characteristics, external quantum efficiencies (EQEs), and internal quantum efficiencies (IQEs) of DJ cells under a 1-sun AM0 spectrum. As elsewhere, Sb incorporation improves the crystal quality of AlGaInP and the fill factor of the DJ solar cell; on the other hand, it increases the band gap of AlGaInP. Al0.08 GaInP with Sb incorporation shows the same absorption edge of EQE as Al0.1 GaInP without Sb incorporation, and J sc increases approximately by 15.3% owing to the reduction of 2% Al composition.