Ni/Al2O3/4H-SiC structure for He++ energy detection in RBS experiments. (18th October 2016)

• Record Type: Journal Article
• Authors: Kaufmann, I.R.; Pick, A.; Pereira, M.B.; Boudinov, H.I.
• Is Part Of: Journal of instrumentation. Volume 11:Number 10(2016:Oct.)
• Page Start: P10013
• Page End: P10013
• Publication Date: 2016-10-18
• Subjects: Detector design and construction technologies and materials -- Materials for solid-state detectors -- Particle detectors -- Solid state detectors; Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/11/10/P10013
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: Epitaxial SiC device have been tested as detector for Rutherford Backscattering Spectroscopy (RBS). The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n + type substrate wafer doped with nitrogen. Aluminum oxide with a thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/Al 2 O 3 /SiC MIS Schottky structure. Variable temperature Current-Voltage curves were used to extract the values of real Schottky Barrier Height and ideality factor (0.61 eV and 1.19, respectively). Current-Voltage and Capacitance-Voltage characteristics were measured and compared with the curves of a commercial Si barrier detector from ORTEC. RBS data for three beam energies (1, 1.5 and 2 MeV) were collected from an Au/Si sample using the fabricated and the commercial detectors simultaneously. The energy resolution for the fabricated detector was estimated to be 76 keV.