Nonlinear parametric interactions in ion-implanted semiconductor plasmas having strain-dependent dielectric constants. (January 2017)

• Record Type: Journal Article
• Authors: Yadav, N; Ghosh, S; Malviya, P S
• Is Part Of: Chinese physics B. Volume 26:Number 1(2017)
• Publication Date: 2017-01
• Subjects: nonlinear parametric interactions -- ion implanted semiconductor plasmas -- strain dependent dielectric constant; 52.35.Mw -- 52.77.Dq -- 77.84.-s; Physics -- Periodicals; Physics; Periodicals; 530.05
• DOI: 10.1088/1674-1056/26/1/015203
• Languages: English
• ISSNs: 1674-1056

Abstract

Abstract : We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants (SDDC). High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10 − 14 –10 − 12 m 2 · V − 2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.