Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes. (23rd May 2019)

• Record Type: Journal Article
• Authors: Li, Wenshen; Nomoto, Kazuki; Hu, Zongyang; Jena, Debdeep; Xing, Huili Grace
• Is Part Of: Applied physics express. Volume 12:Number 6(2019)
• Publication Date: 2019-05-23
• Subjects: power devices -- gallium oxide -- Schottky barrier diode -- interface quality; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab206c
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Ga2 O3 vertical trench Schottky barrier diodes with four different fin-channel orientations are realized on (001) substrates and compared. Fin-channels along the [010] direction with (100)-like sidewalls result in the highest forward current, while other channel orientations all lead to a shallow turn-on behavior and much lower forward current, indicative of severe sidewall depletion attributed to negative interface charges. The comparison indicates that the interface charge density is the smallest on the (100)-like surfaces. The breakdown voltage of the diodes with 1- μ m fin width is around 2.4 kV, with no apparent dependence on the channel orientation.