Calculations of spin-polarized Goos–Hänchen displacement in magnetically confined GaAs/AlxGa1−xAs nanostructure modulated by spin–orbit couplings. (13th March 2018)

• Record Type: Journal Article
• Authors: Lu, Mao-Wang; Chen, Sai-Yan; Zhang, Gui-Lian; Huang, Xin-Hong
• Is Part Of: Journal of physics. Volume 30:Number 14(2018)
• Publication Date: 2018-03-13
• Subjects: semiconductor nanostructure -- Goos–Hanchen effect -- lateral displacement -- spatial spin splitter; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/aab0b2
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: We theoretically investigate Goos–Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure—a magnetically confined GaAs/Al x Ga1− x As nanostructure modulated by spin–orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-polarized GH displacement can be tuned by Rashba or Dresselhaus SOC, i.e. interfacial confining electric field or strain engineering. Based on such a semiconductor nanostructure, a controllable spatial spin splitter can be proposed for spintronics applications.