Differential multiple-time-programmable memory cells by laterally coupled floating metal gate fin field-effect transistors. (24th February 2017)

• Record Type: Journal Article
• Authors: Hsu, Chia-Ling; Liao, Chu-Feng; Chien, Wei Yu; Chih, Yue-Der; Lin, Chrong Jung; King, Ya-Chin
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 4(2017)Supplement
• Publication Date: 2017-02-24
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.04CE03
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this paper, we present a new differential multiple-time-programmable (MTP) memory cell with a novel slot contact coupling structure in the fin field-effect transistor (FinFET) CMOS process. This MTP cell contains a pair of floating metal gates to store differential data on a single cell. Through differential read operations, the cells are less susceptible to read error caused by cell-to-cell variations. In a nano-scaled FinFET process, the gate dielectric layer becomes too thin to retain charge in the floating gates for long periods of time. Differential cell design further extends the data lifetime, even with the serious charge-loss problem, and reduces the overall intellectual property (IP) area.