High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells. (21st December 2016)

• Record Type: Journal Article
• Authors: Muhtadi, Sakib; Hwang, Seong Mo; Coleman, Antwon L.; Lunev, Alexander; Asif, Fatima; Chava, V. S. N.; Chandrashekhar, M. V. S.; Khan, Asif
• Is Part Of: Applied physics express. Volume 10:Number 1(2017)
• Publication Date: 2016-12-21
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.011004
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We demonstrate high-external quantum efficiency (∼50%) solar-blind AlGaN p–n junction photodetectors with high-Al content multiple quantum wells (MQWs). A peak responsivity of 0.1 A/W at 250 nm, which falls >10 3 by 280 nm, indicates that the optical absorption is dominated by the MQW structures. At a reverse bias of 0.5 V, the dark current is <0.1 pA. The readout RC-limited time response is measured as 0.4 µs, and an achievable detector RC-limited time response of 2 ns is estimated. The devices do not show internal gain, which accounts for their high speed.