Quantitative Determination of How Growth Conditions Affect the 3D Composition of InGaAs Nanowires. (18th February 2019)

• Record Type: Journal Article
• Authors: Qu, Jiangtao; Chen, Hansheng; Khan, Mansoor; Yun, Fan; Cui, Xiangyuan; Ringer, Simon P.; Cairney, Julie M.; Zheng, Rongkun
• Editors: Thuvander, Mattias; Meisenkothen, Frederick; Sha, Gang
• Is Part Of: Microscopy and microanalysis. Volume 25:Number 2(2019)
• Page Start: 524
• Page End: 531
• Publication Date: 2019-02-18
• Subjects: atom probe tomography, -- Au catalyst, -- core-shell structure, -- epitaxy growth, -- InGaAs nanowires; Microscopy -- Periodicals; Microchemistry -- Periodicals; 502.82
• DOI: 10.1017/S1431927619000114
• Languages: English
• ISSNs: 1431-9276

Abstract

Abstract: Covering a broad optical spectrum, ternary In x Ga1− x As nanowires, grown by bottom-up methods, have been receiving increasing attention due to the tunability of the bandgap via In composition modulation. However, inadequate knowledge about the correlation between growth and properties restricts our ability to take advantage of this phenomenon for optoelectronic applications. Here, three different InGaAs nanowires were grown under different experimental conditions and atom probe tomography was used to quantify their composition, allowing the direct observation of the nanowire composition associated with the different growth conditions.