A High-Sensitivity Terahertz Detector Based on a Low-Barrier Schottky Diode *Supported by the National Natural Science Foundation of China under Grant No 61434006, and the Basic Application Research of Sichuan Province under Grant No 2017JY0227. (July 2017)

• Record Type: Journal Article
• Authors: Liu 刘, Xiao-Yu 晓宇; Zhang 张, Yong 勇; Xia 夏, De-Jiao 德娇; Ren 任, Tian-Hao 田昊; Zhou 周, Jing-Tao 静涛; Guo 郭, Dong 栋; Jin 金, Zhi 智
• Is Part Of: Chinese physics letters. Volume 34:Number 7(2017:Jul.)
• Publication Date: 2017-07
• Subjects: 07.57.-c -- 84.40.-x -- 84.40.Az; Physics -- Periodicals; Electronic journals; 530.05
• DOI: 10.1088/0256-307X/34/7/070701
• Languages: English
• ISSNs: 0256-307X

Abstract

Abstract : A low-barrier Schottky barrier diode based on the InGaAs/InP material system is designed and fabricated with a new non-destructive dry over-etching process. By using this diode, a high-sensitivity waveguide detector is proposed. The measured maximum responsivity is over 2000 mV/mW at 630 GHz. The measured noise effective power (NEP) is less than 35 pW/Hz 0.5 at 570–630 GHz. The minimum NEP is 14 pW/Hz 0.5 at 630 GHz. The proposed high-sensitivity waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, molecular spectroscopy and atmospheric remote sensing .