Cite
HARVARD Citation
Zhang, Y. et al. (2019). Fast growth of high quality AlN films on sapphire using a dislocation filtering layer for ultraviolet light-emitting diodes. CrystEngComm. 21 (27), pp. 4072-4078. [Online].
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Zhang, Y. et al. (2019). Fast growth of high quality AlN films on sapphire using a dislocation filtering layer for ultraviolet light-emitting diodes. CrystEngComm. 21 (27), pp. 4072-4078. [Online].