A step towards high-performance photovoltaics via three-component P3HT/PANI-graft-rGO nanocomposites. Issue 8 (3rd August 2019)

• Record Type: Journal Article
• Authors: Agbolaghi, Samira
• Is Part Of: Fullerenes, nanotubes and carbon nanostructures. Volume 27:Issue 8(2019)
• Page Start: 650
• Page End: 660
• Publication Date: 2019-08-03
• Subjects: Polyaniline -- rGO -- P3HT -- crystallization -- solar cell; Fullerenes -- Periodicals; Nanotubes -- Periodicals; Nanostructures -- Periodicals; 546.6812
• DOI: 10.1080/1536383X.2019.1629422
• Languages: English
• ISSNs: 1536-383X

Abstract

Abstract: Polyaniline-grafted reduced graphene oxide (PANI- graft -rGO) was synthesized by in situ oxidative polymerization of aniline using amine-terminated rGO (rGO-NH2 ) as an initiator. Nanosheets were applied as templates for crystallization of regioregular poly(3-hexylthiophene) (P3HT) chains. The resulting nano-hybrids entitled supra(rGO-NH2 /P3HT) and supra(PANI- graft -rGO/P3HT) were utilized in the active layers of P3HT:phenyl-C71-butyric acid methyl ester (PC71BM) solar cells to improve the photovoltaic characteristics up to (6.79 mA/cm 2, 43%, and 0.65 V) and (13.21 mA/cm 2, 64%, and 0.67 V), leading to the efficiencies of 1.90% and 5.66%, respectively. In similar conditions and only via replacing the rGO-NH2 with PANI- graft -rGO, the photovoltaic features were elevated. It could be assigned to the impact of PANI grafts in facilitating th[e surface crystallization of P3HT host chains and thereby in well-arranging the active layer constituents. The PANI mediators may act as both acceptors (accepting the electrons from rGO) and donors (donating the electrons to P3HT crystals) in configuration of supra(PANI- graft -rGO/P3HT) nano-hybrids, thus made the supra(PANI- graft -rGO/P3HT) nanostructures the appropriate candidates in manipulation of cell factors. This phenomenon was comprehended from the escalation in contents of hole (µh ) and electron (µe ) mobilities and also short circuit current density (Jsc ) values. The highest µe (8.9 × 10 –3 cm 2 /V.s) and µh (4.5 × 10 –3 cm 2 /V.s) were acquired for electron-only (Al/supra(PANI- graft -rGO/P3HT):P3HT:PC71BM/Al) and hole-only (indium tin oxide (ITO)/poly(3, 4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/supra(PANI- graft -rGO/P3HT):P3HT:PC71BM/Pd) devices. In similar conditions, the charge mobilities were lower in rGO-NH2 based systems either with PC71BM molecules or without them. Graphical Abstract: