Graphene-Insulator-Semiconductor Junction for Hybrid Photodetection Modalities. Issue 1 (December 2017)

• Record Type: Journal Article
• Authors: Howell, Stephen; Ruiz, Isaac; Davids, Paul; Harrison, Richard; Smith, Sean; Goldflam, Michael; Martin, Jeffrey; Martinez, Nicholas; Beechem, Thomas
• Is Part Of: Scientific reports. Volume 7:Issue 1(2017)
• Page Start: 1
• Page End: 9
• Publication Date: 2017-12
• Subjects: Natural history -- Research -- Periodicals; Biology -- Research -- Periodicals; Physical sciences -- Research -- Periodicals; Earth sciences -- Research -- Periodicals; Environmental sciences -- Research -- Periodicals; 502.85
• DOI: 10.1038/s41598-017-14934-4
• Languages: English
• ISSNs: 2045-2322

Abstract

Abstract A sensitive optical detector is presented based on a deeply depleted graphene-insulator-semiconducting (D2 GIS) junction, which offers the possibility of simultaneously leveraging the advantages of both charge integration and localized amplification. Direct read-out and built-in amplification are accomplishedvia photogating of a graphene field-effect transistor (GFET) by carriers generated within a deeply depleted low-doped silicon substrate. Analogous to a depleted metal-oxide-semiconducting junction, photo-generated charge collects in the potential well that forms at the semiconductor/insulator interface and induces charges of opposite polarity within the graphene film modifying its conductivity. This device enables simultaneous photo-induced charge integration with continuous "on detector" readout through use of graphene. The resulting devices exhibit responsivities as high as 2, 500 A/W (25, 000 S/W) for visible wavelengths and a dynamic range of 30 dB. As both the graphene and device principles are transferrable to arbitrary semiconductor absorbers, D2 GIS devices offer a high-performance paradigm for imaging across the electromagnetic spectrum.