Cite
HARVARD Citation
Shengurov, V. et al. (2019). Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates. Materials science in semiconductor processing. pp. 175-178. [Online].
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Shengurov, V. et al. (2019). Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates. Materials science in semiconductor processing. pp. 175-178. [Online].