High-pressure and high-temperature treatment of N-rich B-doped diamonds. Issue 26 (14th June 2019)

• Record Type: Journal Article
• Authors: Miao, Xinyuan; Chen, Liangchao; Ma, Hongan; Fang, Chao; Guo, Longsuo; Wang, Zhanke; Yang, Zhiqiang; Zhao, Zhandong; Jia, Xiaopeng
• Is Part Of: CrystEngComm. Volume 21:Issue 26(2019)
• Page Start: 3961
• Page End: 3965
• Publication Date: 2019-06-14
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c9ce00472f
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : N-rich B-doped single crystal diamonds with different boron additive contents were annealed in conditions of 2.5 GPa and 2300 K. Abstract : N-rich B-doped single crystal diamonds with different boron additive contents were annealed in conditions of 2.5 GPa and 2300 K. The FTIR spectra of the as-grown and annealed crystals indicate that the incorporation of boron impurity decreases the efficiency of the C centers aggregating into the A centers during the process of HPHT annealing treatment. The N + center concentration in the N-rich B-doped crystals slightly increased, and the C–H pairs were all annealed after the HPHT treatment. The Raman spectra of the annealed crystals show narrower FWHM of the 1332 cm −1 peak, suggesting that better crystallinity was achieved by this HPHT treatment. Meanwhile, the Hall effect measurements indicated that the HPHT treatment strengthened the compensation between the N impurity and uncompensated B acceptors; thus, the carrier concentration decreased and the resistivity increased.