Bis(β-ketoiminate) dioxo tungsten(VI) complexes as precursors for growth of WOx by aerosol-assisted chemical vapor deposition. (1st September 2019)

• Record Type: Journal Article
• Authors: Su, Xiaoming; Panariti, Persi; Abboud, Khalil A.; McElwee-White, Lisa
• Is Part Of: Polyhedron. Volume 169(2019)
• Page Start: 219
• Page End: 227
• Publication Date: 2019-09-01
• Subjects: Tungsten oxide -- Aerosol-assisted chemical vapor deposition -- Single source precursors -- Metal oxo complexes -- Metal oxide films; Chemistry, Inorganic -- Periodicals; Chimie inorganique -- Périodiques; Organometaalverbindingen; Anorganische chemie; 546.05
• DOI: 10.1016/j.poly.2019.05.013
• Languages: English
• ISSNs: 0277-5387

Abstract

Graphical abstract: Bis(β-ketoiminate) dioxo tungsten(VI) complexes WO2 L2 (L = acNac, acNac Me, acNac Et ) have been synthesized and characterized. The performance of WO2 (acNac Me )2 as an AACVD precursor was evaluated at growth temperatures of 250–550 °C using nitrogen as the carrier gas. The deposited films were analyzed by XPS, XRD and SEM. Abstract: Bis(β-ketoiminate) dioxo tungsten(VI) complexes WO2 L2 (L = acNac, acNac Me, acNac Et ) have been synthesized and characterized. The thermal behaviors and possible decomposition mechanisms of these dioxo compounds were studied by TGA, MS and thermolysis. The performance of WO2 (acNac Me )2 as an AACVD precursor was evaluated at growth temperatures of 250–550 °C using nitrogen as the carrier gas. The elemental compositions of the as-deposited and sputtered tungsten oxide films were determined by XPS. The morphology and stoichiometry of the as-deposited films were studied by SEM and XRD.