Cite
HARVARD Citation
Laifi, J. et al. (2019). Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates. Materials science in semiconductor processing. pp. 253-261. [Online].
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Laifi, J. et al. (2019). Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates. Materials science in semiconductor processing. pp. 253-261. [Online].