Cite
HARVARD Citation
Lee, C. et al. (2018). Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates. Nanotechnology. p. . [Online].
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Lee, C. et al. (2018). Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates. Nanotechnology. p. . [Online].