Extended X-ray absorption fine structure analysis of voltage-induced effects in the interfacial atomic structure of Fe/Pt/MgO. (23rd May 2017)

• Record Type: Journal Article
• Authors: Suzuki, Motohiro; Tsukahara, Takuya; Miyakaze, Risa; Furuta, Taishi; Shimose, Koki; Goto, Minori; Nozaki, Takayuki; Yuasa, Shinji; Suzuki, Yoshishige; Miwa, Shinji
• Is Part Of: Applied physics express. Volume 10:Number 6(2017)
• Publication Date: 2017-05-23
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.063006
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: The voltage-controlled magnetic anisotropy of ferromagnetic metals may offer potential applications of nonvolatile memories with ultralow power consumption. For achieving ultrafast recording and long-time endurance, voltage-induced effects without undesirable lattice distortions should be ensured. In this study, in-situ extended X-ray absorption fine structure analysis of an Fe/Pt/MgO junction demonstrated the unaltered interfacial atomic structure, in which the radial distances between the Pt and the neighboring Fe, Pt, O, and Mg atoms changed by less than ±0.01 Å under electric fields of ±0.18 V/nm. Therefore, the anisotropy change is driven by a purely electronic mechanism without lattice deformation or atomic relaxation.