Effect of slurry composition on the chemical mechanical polishing of thin diamond films. Issue 1 (31st December 2017)

• Record Type: Journal Article
• Authors: Werrell, Jessica M.; Mandal, Soumen; Thomas, Evan L. H.; Brousseau, Emmanuel B.; Lewis, Ryan; Borri, Paola; Davies, Philip R.; Williams, Oliver A.
• Is Part Of: Science and technology of advanced materials. Volume 18:Issue 1(2017)
• Page Start: 654
• Page End: 663
• Publication Date: 2017-12-31
• Subjects: Chemical mechanical polishing -- nanocrystalline diamond -- surface roughness -- chemical vapour deposition; 40 Optical, magnetic and electronic device materials -- 301 Chemical syntheses / processing -- 212 Surface and interfaces -- 303 Mechanical / Physical processing -- 306 Thin film / Coatings; Materials -- Technological innovations -- Periodicals; 620.112
• DOI: 10.1080/14686996.2017.1366815
• Languages: English
• ISSNs: 1468-6996

Abstract

Abstract : Nanocrystalline diamond (NCD) thin films grown by chemical vapour deposition have an intrinsic surface roughness, which hinders the development and performance of the films' various applications. Traditional methods of diamond polishing are not effective on NCD thin films. Films either shatter due to the combination of wafer bow and high mechanical pressures or produce uneven surfaces, which has led to the adaptation of the chemical mechanical polishing (CMP) technique for NCD films. This process is poorly understood and in need of optimisation. To compare the effect of slurry composition and pH upon polishing rates, a series of NCD thin films have been polished for three hours using a Logitech Ltd. Tribo CMP System in conjunction with a polyester/polyurethane polishing cloth and six different slurries. The reduction in surface roughness was measured hourly using an atomic force microscope. The final surface chemistry was examined using X-ray photoelectron spectroscopy and a scanning electron microscope. It was found that of all the various properties of the slurries, including pH and composition, the particle size was the determining factor for the polishing rate. The smaller particles polishing at a greater rate than the larger ones. Abstract :