Cite
HARVARD Citation
Nguyen, H. et al. (2018). TCAD simulation of radiation-induced leakage current in 1T1C SDRAM. Microelectronics and reliability. pp. 974-978. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Nguyen, H. et al. (2018). TCAD simulation of radiation-induced leakage current in 1T1C SDRAM. Microelectronics and reliability. pp. 974-978. [Online].