Cite
HARVARD Citation
Li, B. et al. (2018). Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. Microelectronics and reliability. pp. 969-973. [Online].
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Li, B. et al. (2018). Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. Microelectronics and reliability. pp. 969-973. [Online].