Cite
HARVARD Citation
Du, H. et al. (2018). Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. Microelectronics and reliability. pp. 661-665. [Online].
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Du, H. et al. (2018). Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. Microelectronics and reliability. pp. 661-665. [Online].