Cite
HARVARD Citation
Rzin, M. et al. (2018). On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. Microelectronics and reliability. pp. 397-401. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Rzin, M. et al. (2018). On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. Microelectronics and reliability. pp. 397-401. [Online].