Cite
HARVARD Citation
Abbate, C. et al. (2018). Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. Microelectronics and reliability. pp. 941-945. [Online].
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Abbate, C. et al. (2018). Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. Microelectronics and reliability. pp. 941-945. [Online].