Cite
HARVARD Citation
Zhang, T. et al. (2018). The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. Microelectronics and reliability. pp. 631-635. [Online].
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Zhang, T. et al. (2018). The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. Microelectronics and reliability. pp. 631-635. [Online].