Cite
HARVARD Citation
Dammann, M. et al. (2018). Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectronics and reliability. pp. 385-388. [Online].
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Dammann, M. et al. (2018). Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectronics and reliability. pp. 385-388. [Online].