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HARVARD Citation
Aguiar, Y. et al. (2018). Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions. Microelectronics and reliability. pp. 920-924. [Online].
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Aguiar, Y. et al. (2018). Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions. Microelectronics and reliability. pp. 920-924. [Online].