Broadband photodetectors based on 2D group IVA metal chalcogenides semiconductors. (June 2019)

• Record Type: Journal Article
• Authors: Wang, Bing; Zhong, Shi Peng; Zhang, Zhi Bin; Zheng, Zhao Qiang; Zhang, Yu Peng; Zhang, Han
• Is Part Of: Applied materials today. Volume 15(2019)
• Page Start: 115
• Page End: 138
• Publication Date: 2019-06
• Subjects: Photodetectors -- 2D group IVA metal chalcogenides -- Electrode -- Substrate -- Fabrication; Materials science -- Periodicals; Materials -- Research -- Periodicals; 620.1105
• DOI: 10.1016/j.apmt.2018.12.010
• Languages: English
• ISSNs: 2352-9407

Abstract

Graphical abstract: Highlights: Among 2D vdWMs, most of group IVA metal chalcogenides (GIVMCs, metal = Ge, Sn, Pb; chalcogen = S, Se) have emerged as promising and compelling candidates for broadband and high performance photodetectors due to its great carrier mobility, high absorption coefficient and relative narrow band gap range. Moreover, this group of semiconductors is made up of earth-abundant and environmental-friendly elements with prominent chemical stability, making them particularly attractive for practical applications. Although a review titled 'Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family' has been published in 2016, this review comprises many important contents absent in the previous one so as to be more systemic, overall and valuable than the previous one to supply readers with information and knowledge in this field. Many potentials for further investigating photodetector based on 2D GIVMCs have been proposed to be beneficial to continue optimizing current photodetectors and exploiting new type ones in the near future. Abstract: In recent years, photodetectors have very important applications in image sensing, optical communication, fire detection, environmental monitoring, space detection, safety detection, many other scientific research and industrial technology fields, which are regarded as the key components of wearable devices. Due to its great carrier mobility, high absorption coefficient and relatively narrower bandgap engineering, various of photodetector based on 2D group IVA metal chalcogenides, the corresponding ternary alloys and the heterostructures have been reported. Importantly, most of them basically have excellent performance of photodetecting properties, such as large photocurrent, high detectivity, perfect responsivity, high external quantum efficiency, short response and recovery time, broadband photo adsorption and response from ultraviolet to mid infrared range. Moreover, this group of semiconductors is made up of earth-abundant and environmental-friendly elements with prominent chemical stability, which makes them particularly attractive for practical optic electronic applications. Therefore, this concept introduces the recent advances on the materials, synthesis, device fabrication and photodetection mechanism for various of 2D group IVA metal chalcogenides photodetector from an overall perspective. Moreover, challenges and future development trends are discussed.