A 68-nW novel CMOS sub-bandgap voltage reference circuit. (July 2019)

• Record Type: Journal Article
• Authors: Lei, Jianming; Wang, Zhen; Wang, Xiaolong
• Is Part Of: Microelectronics journal. Volume 89(2019)
• Page Start: 37
• Page End: 40
• Publication Date: 2019-07
• Subjects: CMOS -- Subthreshold circuit -- Energy efficient circuit -- Low supply voltage -- Process-insensitive -- Temperature compensation; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2019.05.006
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: This paper proposes a CMOS sub-bandgap reference (sub-BGR) circuit without resistors for ultra-low power applications. The BGR core circuit consists of a vertical PNP bipolar transistor, a temperature-compensation amplifier and a Proportional to Absolute Temperature (PTAT) voltage generator. The PTAT voltage generator consists of four p-type transistors and generates a positive temperature dependent voltage, which compensates for the negative temperature dependent base-emitter voltage in a PNP bipolar transistor. The circuit generates a sub-bandgap voltage of silicon. The sub-BGR is fabricated with 65-nm standard CMOS process with an area of 400 μm × 80 μm. Experimental results demonstrate that this sub-BGR circuit can generate a 202.8 mV reference voltage with a power consumption of 68 nW.