Stacking Fault Energy of Si Nanocrystals Embedded in SiO2. (18th May 2011)

• Record Type: Journal Article
• Authors: Wang, Y. Q.; Liang, W. S.; Ross, G. G.
• Other Names: Cazzanelli M. Academic Editor.; Kachurin G. A. Academic Editor.; Tsoukalas D. Academic Editor.
• Is Part Of: ISRN nanotechnology. Volume 2011(2011)
• Publication Date: 2011-05-18
• Subjects: Nanotechnology -- Periodicals; Nanotechnology; Nanotechnology; Electronic journals; Periodicals; Electronic journals; 620.5
• DOI: 10.5402/2011/639714
• Languages: English
• ISSNs: 2090-6064

Abstract

Abstract : Si nanocrystals (Si nc) were produced by the implantation of Si + into a SiO2 film on (100) Si, followed by high-temperature annealing. High-resolution transmission electron microscopy (HRTEM) observation has shown that a perfect dislocation (Burgers vectorb = (1 / 2) 〈 110 〉 ) can dissociate into two Shockley partials (Burgers vectorb = (1 / 6) 〈 112 〉 ) bounding a strip of stacking faults (SFs). The width of the SFs has been determined from the HRTEM image, and the stacking fault energy for Si nc has been calculated. The stacking fault energy for Si nc is compared with that for bulk Si, and the formation probability of defects in Si nc is also discussed. The results will shed a light on the dissociation of dislocations in nanoparticles.