Growth of Vertically Aligned Carbon Nanotubes on Silicon Using a Sparked Iron-Cobalt Catalyst. (11th August 2011)

• Record Type: Journal Article
• Authors: Saengmee-anupharb, Sirikamon; Thongpang, Sanitta; Bertheir, Erwin S. P.; Singjai, Pisith
• Other Names: Škorvánek I. Academic Editor.
• Is Part Of: ISRN nanotechnology. Volume 2011(2011)
• Publication Date: 2011-08-11
• Subjects: Nanotechnology -- Periodicals; Nanotechnology; Nanotechnology; Electronic journals; Periodicals; Electronic journals; 620.5
• DOI: 10.5402/2011/684748
• Languages: English
• ISSNs: 2090-6064

Abstract

Abstract : Vertically aligned carbon nanotubes (VA-CNTs) were successfully grown on silicon substrates by atmospheric pressure chemical vapor deposition at 750 ∘ C using acetylene as a carbon source and Fe-Co nanoparticle thin films as a cocatalyst. Preparation of the cocatalyst was operated by an economical sparking process. A small amount of water vapor was introduced into the reactor by controlling diffusion by heated water in a flask. The CNTs were characterized by scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The VA-CNTs were obtained only when the water vapor fraction in the introduced gas was in the range of 310–440 ppm. The length of the VA-CNTs reached 0.8 mm with a growth rate of 17 μ m/min. Moreover, D/G-band ratio suggests that the optimum fraction of water vapor decreases defects in CNTs.