Synthesis and Characterization of Pb(Zr0.53, Ti0.47)O3-Pb(Nb1/3, Zn2/3)O3 Thin Film Cantilevers for Energy Harvesting Applications. (10th April 2012)

• Record Type: Journal Article
• Authors: Fuentes-Fernandez, E. M. A.; Debray-Mechtaly, W.; Quevedo-Lopez, M. A.; Gnade, B.; Leon-Salguero, E.; Shah, P.; Alshareef, H. N.
• Other Names: Jan Ma Academic Editor.
• Is Part Of: Smart materials research. Volume 2012(2012)
• Publication Date: 2012-04-10
• Subjects: Smart materials -- Periodicals; Smart materials; Periodicals; Electronic journals; 620.11
• DOI: 10.1155/2012/872439
• Languages: English
• ISSNs: 2090-3561

Abstract

Abstract : A complete analysis of the morphology, crystallographic orientation, and resulting electrical properties of Pb(Zr0.53, Ti0.47 )O 3 − Pb(Nb1/3, Zn2/3 )O3 (PZT-PZN) thin films, as well as the electrical behavior when integrated in a cantilever for energy harvesting applications, is presented. The PZT-PZN films were deposited using sol-gel methods. We report that using 20% excess Pb, a nucleation layer of PbTiO3 (PT), and a fast ramp rate provides large grains, as well as denser films. The PZT-PZN is deposited on a stack of TiO2 /PECVD SiO2 /Si3 N4 /thermal SiO2 /Poly-Si/Si. This stack is designed to allow wet-etching the poly-Si layer to release the cantilever structures. It was also found that the introduction of the poly-Si layer results in larger grains in the PZT-PZN film. PZT-PZN films with a dielectric constant of 3200 and maximum polarization of 30 μ C/cm 2 were obtained. The fabricated cantilever devices produced ~ 300–400 mV peak-to-peak depending on the cantilever design. Experimental results are compared with simulations.