High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 µm. Issue 6 (10th May 2019)

• Record Type: Journal Article
• Authors: Yin, Yanlong; Cao, Rui; Guo, Jingshu; Liu, Chaoyue; Li, Jiang; Feng, Xianglian; Wang, Huide; Du, Wei; Qadir, Akeel; Zhang, Han; Ma, Yungui; Gao, Shiming; Xu, Yang; Shi, Yaocheng; Tong, Limin; Dai, Daoxin
• Is Part Of: Laser & photonics reviews. Volume 13:Issue 6(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-05-10
• Subjects: black phosphorus -- mid‐infrared -- photodetectors -- silicon photonics -- waveguides; Lasers -- Periodicals; Photonics -- Periodicals; Lasers -- Périodiques; Photonique -- Périodiques; 621.36
• DOI: 10.1002/lpor.201900032
• Languages: English
• ISSNs: 1863-8880

Abstract

Abstract: Silicon photonics is being extended from the near‐infrared window of 1.3–1.5 µm for optical fiber communications to the mid‐infrared (mid‐IR) wavelength‐band of 2 µm or longer for satisfying the increasing demands in many applications. Mid‐IR waveguide photodetectors on silicon have attracted intensive attention as one of the indispensable elements for various photonic systems. However, when combining traditional semiconductor materials with silicon, there are some challenges due to lattice mismatch and thermal expansion mismatch. As an alternative, two‐dimensional (2D) materials provide a new and promising option for enabling active photonic devices on silicon. Here black‐phosphorus (BP) thin films with optimized medium thicknesses (≈40 nm) are introduced as the active material for light absorption and silicon/BP hybrid ridge waveguide photodetectors at 2 µm are demonstrated with a high responsivity of 306.7 mA W −1 at a low bias voltage of 0.4 V. The 3 dB‐bandwidth is up to 1.33 GHz and an experiment of a 4.0 Gbit s −1 data receiving is also demonstrated. Abstract : Black phosphorus has been recognized as a promising two‐dimensional (2D) material for optoelectronics, owing to its adjustable bandgap, high carrier mobility, and easy integration. A mid‐infrared hybrid silicon/black‐phosphorus waveguide photodetector is demonstrated with a high speed of 4.0 Gbps and high responsivty of 0.3 A W −1 at a low bias voltage of 0.4 V.